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Introduction to Microelectronic Fabrication: Volume 5 of Modular Series on Solid State Devices
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About Introduction To Microelectronic Fabrication: Volume
Product Description For courses in Theory and Fabrication of Integrated Circuits. The author's goal in writing this text was to present a concise survey of the most up-to-date techniques in the field. It is devoted exclusively to processing, and is highlighted by careful explanations, clear, simple language, and numerous fully-solved example problems. This work assumes a minimal knowledge of integrated circuits and of terminal behavior of electronic components such as resistors, diodes, and MOS and bipolar transistors. From the Back Cover Introduction to Microelectronic Fabrication, Second Edition, by Richard C. Jaeger, is a concise survey of the most up-to-date techniques in the field. It is devoted exclusively to processing and is highlighted by careful explanations, clean, simple language, and numerous fully solved example problems. The second edition includes an entirely new chapter on MEMS, as well as substantial modifications to the chapters on MOS and bipolar process integration. Also included is new or expanded coverage of lithography and exposure systems, trench isolation, chemical mechanical polishing, shallow junctions, transient enhanced diffusion, copper Damascene processes and process simulation. Excerpt. © Reprinted by permission. All rights reserved. The spectacular advances in the development and application of integrated circuit (IC) technology have led to the emergence of microelectronics process engineering as an independent discipline. Additionally, the pervasive use of integrated circuits requires a broad range of engineers in the electronics and allied industries to have a basic understanding of the behavior and limitations of ICs. One of the goals of this book is to address the educational needs of individuals with a wide range of backgrounds. This text presents an introduction to the basic processes common to most IC technologies and provides a base for understanding more advanced processing and design courses. In order to contain the scope of the material, we deal only with material related to silicon processing and packaging. The details of many problems specifically related to VLSI/ULSI fabrication are left to texts on advanced processing, a4ough problem areas are mentioned at various points in this text, and goals of the international Technology Roadmap for Semiconductors are discussed as appropriate. Chapter 1 provides an overview of IC processes, and Chapters 2-6 then focus on the basic steps used in fabrication, including lithography, oxidation, diffusion, ion implantation and thin film deposition, and etching. Interconnection technology, packaging, and yield are covered in Chapters 7 and 8. It is important to understand interactions between process design, device design, and device layout. For this reason, Chapter 9 and 10 on MOS and bipolar process integration have been included. Chapter 11 provides a brief introduction to the exciting area of Microelectromechanical Systems (MEMS). Major changes in the second edition of this text include new or expanded coverage of lithography and exposure systems, trench isolation, chemical mechanical polishing, shallow junctions, transient-enhanced diffusion, copper Damescene processes, and process simulation. The chapters on MOS and bipolar process integration have been substantially modified, and the chapter on MEMS is entirely new. The problem sets have been expanded, and additional information on measurement techniques has been included. The text evolved from notes originally developed for a course introducing seniors and beginning graduate students to the fabrication of solid-state devices and integrated circuits. A basic knowledge of the material properties of silicon is needed, and we use Volume I of this Series as a companion text. An introductory knowledge of electronic components such as resistors, diodes, and MOS and bipolar transistors is also useful. The material in the book is designed to be covered in one semester. I
