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Product ID:
91267
Identifier:
B08LVLVMLL
Brand:
CHANZON
Model:
Shipping Weight:
0.07 lbs
Manufacturer:
CHANZON
Shipping Dimension:
6.3 x 5.51 x 0.51 inches
₱707
+ ₱ 150
Shipping Cost from USA to Philippines inclusive of custom fees.
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Get it between 2026-06-04 to 2026-06-11.
Additional 3 business days for provincial shipping.
- Price and Stocks may change without prior notice
- Packaging of actual item may differ from photo shown
Cash upon Pick-up - orders grand total must not exceed ₱5,000.00. Order will be pickup at Galleon's Office.
Cash on Delivery - orders grand total must not exceed of ₱10,000.00 and must not exceed ₱5,000.00 for provincial areas. See all payment methods
Transistor Type: High Dissipation N-Channel MOSFET Transistor.
Transistor Polarity: NMOS Field-Effect Transistor.
Specification: Able to handle PD (Power Dissipation) of 142W, ID (Drain Current) of 7A, VDSS (Drain-Source Voltage) of 600V and RDS(on) (On-State Resistance) of 1.2Ω.
Application: Frequently used for high-efficiency power conversion, voltage regulation and motor control.
Package: Comes in a TO-220F package, a pack of 10 pieces, safely packaged in an Anti-static bag for ESD protection and longer shelf life.
Silicon N-Channel Power MOSFET Experience high efficiency and system miniaturization with our CS7N60F A9HD Enhanced VDMOSFET. Ideal for power switch circuits in adaptors and chargers, this MOSFET offers: Fast Switching for quick response times. Improved ESD Capability for enhanced protection against electrostatic discharge. Low Gate Charge (Typical: 28nC) for efficient power management. Low Reverse Transfer Capacitances (Typical: 12pF) for minimal signal interference. Avalanche Energy Test ensuring reliability under high-energy conditions. Key Specifications: Drain-to-Source Voltage (VDSS): 600V Continuous Drain Current (ID): 7A at 25°C, 4.5A at 100°C Gate-to-Source Voltage (VGS): ±30V Single Pulse Avalanche Energy (EAS): 550mJ Avalanche Current (IAR): 3.3A Peak Diode Recovery dv/dt (a3): 5.0V/ns Power Dissipation (PD): 40W at 25°C, with a derating factor of 0.32W/°C above 25°C Operating Junction and Storage Temperature Range: -55 to 150°C Maximum Temperature for Soldering (TL): 300°C Optimized for performance and reliability, our MOSFET features a robust design that meets the RoHS standard in a TO-220F package. It's the perfect choice for applications demanding high efficiency and compact design. Warning: Use within 80% of maximum ratings to ensure device reliability and longevity. Handle with care to protect from static electricity.
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