Chanzon AO4406 SOP-8 NMOS MOS N-Channel Power MOSFET Transistor, High Efficiency for Electronic Components (Pack of 10pcs)

3.8 / 5

Product ID:

78632

Identifier:

B08LVLLXGX

Brand:

CHANZON

Model:

Shipping Weight:

0.03 lbs

Manufacturer:

CHANZON

Shipping Dimension:

6.3 x 5.51 x 0.39 inches

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₱525

+ ₱ 150

International Shipping

Shipping Cost from USA to Philippines inclusive of custom fees.

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Get it between 2026-06-05 to 2026-06-12.

Additional 3 business days for provincial shipping.

- Price and Stocks may change without prior notice

- Packaging of actual item may differ from photo shown

Electrical items MAY be 110 volts.

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7 Day Return Policy

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Cash On Delivery/Cash Upon Pickup Available

Cash upon Pick-up - orders grand total must not exceed ₱5,000.00. Order will be pickup at Galleon's Office.

Cash on Delivery - orders grand total must not exceed of ₱10,000.00 and must not exceed ₱5,000.00 for provincial areas. See all payment methods

FEATURES

Transistor Type: High-performance N-Channel Power MOSFET Transistor.

Transistor Polarity: Advanced N-Channel MOSFET technology provides optimized performance.

Specifications: Excellent power handling with VDSS up to 30V, ID up to 11.5A, PD up to 3W and low on-state resistance of 0.014 Ω.

Application: Commonly used for high-efficiency switching, amplification, and power management in various electronics.

Package: Secured in an Anti-Static bag for electrostatic protection, ensures ESD safety, and guarantees long shelf life.

DESCRIPTIONS

Product Description: This 30V N-Channel MOSFET is designed for high-efficiency power management in a variety of applications, including high side switches in SMPS and general-purpose use. With advanced trench technology, it offers exceptional performance and reliability. Key Features: - Drain-Source Voltage (VDS): 30V - On-State Drain Current (ID): Up to 13A at VGS=10V - Static Drain-Source On-Resistance (RDS(ON)): <11.5mΩ at VGS=10V, <15.5mΩ at VGS=4.5V - Gate Threshold Voltage (VGS(th)): 1.5V to 2.5V - Gate Charge (Qg): 11nC to 17nC at VGS=10V, 5nC to 8nC at VGS=4.5V - Input Capacitance (Ciss): 610pF to 910pF - Thermal Characteristics: Junction-to-Ambient Thermal Resistance (RθJA): 31°C/W to 59°C/W - Operating Temperature Range: -55°C to 150°C Switching Performance: - Turn-On Delay Time (td(on)): Typically 4.4ns - Turn-On Rise Time (tr): Typically 9ns - Turn-Off Delay Time (td(off)): Typically 17ns - Turn-Off Fall Time (tf): Typically 6ns Avalanche Capability: - Peak Avalanche Current (IAR): Up to 24A - Avalanche Energy (EAS): 100mJ Body Diode Characteristics: - Forward Voltage (VF): Data available in the specification - Reverse Recovery Charge (Qrr): 6.4nC to 9.6nC Package: SOIC-8 This MOSFET is UIS tested and has a 100% gate resistance test, ensuring quality and reliability in your power switching applications.