Chanzon 5N60 TO-220F NMOS MOS N-Channel Power MOSFET Transistor (Pack of 10pcs)

Product ID:

91265

Identifier:

B08LVN544G

Brand:

CHANZON

Model:

Shipping Weight:

0.07 lbs

Manufacturer:

CHANZON

Shipping Dimension:

6.3 x 5.51 x 0.51 inches

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₱707

+ ₱ 150

International Shipping

Shipping Cost from USA to Philippines inclusive of custom fees.

Cost too high? Check weight and dimension on product details and click "I think this is wrong?" link.

Get it between 2026-06-05 to 2026-06-12.

Additional 3 business days for provincial shipping.

- Price and Stocks may change without prior notice

- Packaging of actual item may differ from photo shown

Electrical items MAY be 110 volts.

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7 Day Return Policy

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Cash On Delivery/Cash Upon Pickup Available

Cash upon Pick-up - orders grand total must not exceed ₱5,000.00. Order will be pickup at Galleon's Office.

Cash on Delivery - orders grand total must not exceed of ₱10,000.00 and must not exceed ₱5,000.00 for provincial areas. See all payment methods

FEATURES

Transistor Type: NMOS N-Channel Power MOSFET Transistor.

Transistor Polarity: N-Channel MOSFET Transistor.

Specification: Manages ID up to 4.5A, VDSS up to 600V, and RDS(on) of 2.5 Ω.

Application: Commonly used for high-power switching, amplification, and power management applications such as power supplies, motor control, and audio amplifiers.

Package: Anti-Static bag offers electrostatic protection, ESD safety, and long shelf life.

DESCRIPTIONS

Product Description: This Silicon N-Channel Power MOSFET is an advanced VDMOSFET designed for high efficiency and fast switching in power switching circuits. Ideal for use in various applications such as power adapters and chargers, it offers superior performance with low conduction loss and enhanced avalanche energy capabilities. Key Features: - Fast Switching - Low ON Resistance (Rdson ≤ 2.5Ω) - Low Gate Charge (Typical: 14.5nC) - Low Reverse Transfer Capacitances (Typical: 4pF) Absolute Maximum Ratings: - Drain-to-Source Voltage (VDSS): 600V - Continuous Drain Current (ID): 5A at TC=25°C, 3.1A at TC=100°C - Gate-to-Source Voltage (VGS): ±30V - Single Pulse Avalanche Energy (EAS): 250mJ - Power Dissipation (PD): 30W Electrical Characteristics: - Drain to Source Breakdown Voltage (VDSS): 600V - Drain to Source Leakage Current (IDSS): ≤ 1µA at 25°C, ≤ 100µA at 125°C - Gate Threshold Voltage (VGS(TH)): 2.0 to 4.0V - Forward Transconductance (gfs): Typically 3.5S - Total Gate Charge (Qg): Typically 14.5nC Resistive Switching Characteristics: - Turn-on Delay Time (td(ON)): Typically 14ns - Rise Time (tr): Typically 15ns - Turn-Off Delay Time (td(OFF)): Typically 34ns - Fall Time (tf): Typically 13ns Source-Drain Diode Characteristics: - Continuous Source Current (Body Diode): 5A - Maximum Pulsed Current (Body Diode): 20A - Diode Forward Voltage (VSD): 1.5V at IS=5.0A Thermal Characteristics: - Junction-to-Case Thermal Resistance (RθJC): 4.17℃/W - Junction-to-Ambient Thermal Resistance (RθJA): 62.5℃/W Package Information: - Package Type: TO-220F Safety and Environmental Standards: