Chanzon IRF510NPBF TO-220AB NMOS MOS N-Channel Power MOSFET Transistor (Pack of 10pcs)

4.6 / 5

₱678

+ ₱ 109

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Get it between 2026-06-04 to 2026-06-11.

Additional 3 business days for provincial shipping.

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DETAILS

Product ID:

76532

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Identifier:

B08M3DRBK1

Brand:

CHANZON

Model:

Shipping Weight:

0.07 lbs

Manufacturer:

CHANZON

Shipping Dimension:

6.3 x 5.51 x 0.51 inches

FEATURES

Transistor Type: Power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor).

Transistor Polarity: N-Channel NMOS Transistor.

Specification: Detailed parameters to be determined, offering high performance and efficiency.

Application: Ideal for high power switching and amplification tasks in various electronics circuits like power supplies and motor control units.

Package: Comes in an Anti-Static bag ensuring electrostatic protection, ESD safety, and long shelf life.

DESCRIPTIONS

Product Description Introducing a high-performance power MOSFET designed for demanding applications requiring fast switching and high reliability. This third-generation combines rugged device design with cost-effectiveness, making it ideal for commercial-industrial use. Key Features: Dynamic dv/dt Rating: Ensures robust performance under rapid voltage changes. Repetitive Avalanche Rated: Built to withstand high-energy transients repeatedly. Operating Temperature up to 175°C: Suitable for high-temperature environments. Fast Switching: Designed for applications requiring quick response times. Ease of Paralleling: Facilitates the use of multiple units for higher current handling. Simple Drive Requirements: Easy to integrate into existing circuit designs. Technical Highlights: Drain-to-Source Breakdown Voltage (V(BR)DSS): 100V Static Drain-to-Source On-Resistance (RDS(on)): Min. 0.54Ω at VGS=10V Gate Threshold Voltage (VGS(th)): 2.0V to 4.0V Forward Transconductance (gfs): 1.3s at VDS=50V, ID=3.4A Turn-On Delay Time (td(on)): Typically 6.9ns Rise Time (tr): 16ns at ID=5.6A Turn-Off Delay Time (td(off)): Typically 15ns Fall Time (tf): 9.4ns Internal Drain Inductance (Ld): 4.5nH Internal Source Inductance (Ls): 7.5nH Input Capacitance (Ciss): 180pF at VGS=0V