Galleon 2026Download our mobile shopping application for faster and easy transaction.
Product ID:
91266
Identifier:
B08LVL4J9L
Brand:
CHANZON
Model:
Shipping Weight:
0.07 lbs
Manufacturer:
CHANZON
Shipping Dimension:
6.3 x 5.51 x 0.51 inches
₱707
+ ₱ 150
Shipping Cost from USA to Philippines inclusive of custom fees.
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Get it between 2026-06-06 to 2026-06-13.
Additional 3 business days for provincial shipping.
- Price and Stocks may change without prior notice
- Packaging of actual item may differ from photo shown
Cash upon Pick-up - orders grand total must not exceed ₱5,000.00. Order will be pickup at Galleon's Office.
Cash on Delivery - orders grand total must not exceed of ₱10,000.00 and must not exceed ₱5,000.00 for provincial areas. See all payment methods
Transistor Type: High Power N-Channel Metal-Oxide-Semiconductor Field-Effect (NMOS) Transistor.
Transistor Features: Designed with excellent power dissipation capacity of 125W and high drain current of 6A.
Performance Specifications: Boasts drain-to-source voltage (VDSS) of 600V and low on-state resistance (RDS (on)) of 1.2Ω.
Application: Ideal for high-power switching and regulation applications in power supplies, motor control, and other advanced electronic circuits.
Package: Shipped in an Anti-Static bag for optimal electrostatic protection, guaranteeing ESD safety and prolonged shelf life.
Product Description: This N-Channel Power MOSFET is designed for high-efficiency power switching applications, ensuring fast switching and low conduction loss. Ideal for use in power switch circuits of adaptors and chargers, it features a robust TO-220F package compliant with RoHS standards. Key Features: Fast Switching for quick response times. Low ON Resistance (Rdson ≤ 1.7Ω) for minimal power dissipation. Low Gate Charge (Typical: 19.5nC) for efficient operation. Low Reverse Transfer Capacitance (Typical: 7.5pF) for stable performance. Avalanche Energy Tested for reliability. Technical Specifications: Drain-to-Source Voltage (VDSS): 600V Continuous Drain Current (ID): 6A at 25°C, 3.6A at 100°C Gate-to-Source Voltage (VGS): ±30V Single Pulse Avalanche Energy (EAS): 270mJ Power Dissipation (PD): 34W at 25°C, derating factor 0.27W/°C Operating Junction Temperature Range: -55 to 150°C Dynamic Characteristics: Forward Transconductance (gfs): -- S Input Capacitance (Ciss): 720pF Output Capacitance (Coss): 75pF Reverse Transfer Capacitance (Crss): 7.5pF at 1.0MHz Resistive Switching Characteristics: Turn-on Delay Time (td(ON)): Typically 9.5ns Rise Time (tr): Typically 11ns Turn-Off Delay Time (td(OFF)): Typically 34ns Fall Time (tf): Typically 16ns Total Gate Charge (Qg): 19.5nC Source-Drain Diode Characteristics: Continuous Source Current (IS): 6A Diode Forward Voltage (VSD): 1.5V at IS=6.0A Reverse Recovery Time (trr): 203ns Thermal Performance: Junction-to-Case Thermal Resistance (RθJC): 3.68℃/W
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