Chanzon 2N7000 TO-92 NMOS MOS N-Channel Power MOSFET Transistor, Ideal for Electronic Circuits (Pack of 100pcs)

4.6 / 5

₱890

+ ₱ 150

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Get it between 2026-06-02 to 2026-06-09.

Additional 3 business days for provincial shipping.

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DETAILS

Product ID:

81080

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Identifier:

B083TF4K6L

Brand:

CHANZON

Model:

Shipping Weight:

0.05 lbs

Manufacturer:

CHANZON

Shipping Dimension:

4.02 x 3.7 x 0.31 inches

FEATURES

Transistor Type: High-Quality NMOS N-Channel Power MOSFET Transistor.

Transistor Polarity: N-Channel, Ideal for High Performance Power Switching Applications.

Specification: VDSS up to 60V, ID up to 0.2A, PD of 0.4W at a Ta of 25 ℃, with a low RDS(on) of 5.3 Ω.

Application: Versatile usage for amplification and power management in numerous electronic circuits, including power supplies and motor controls.

Package: Delivered in an Anti-Static bag providing superb electrostatic protection, ensuring ESD safety and long shelf life.

DESCRIPTIONS

Product Description: The 2N7000 MOSFET is an N-Channel Enhancement Mode Field-Effect Transistor, designed for high-density cell construction to provide a low on-resistance (RDS(on)). It is a voltage-controlled small signal switch known for its ruggedness and reliability, making it ideal for a variety of applications. Key Features: Low RDS(on) for efficient power management High saturation current capability Reliable performance in various electronic circuits Max Ratings: Drain-Source Voltage (VDS): 60V Continuous Drain Current (ID): 0.2A Power Dissipation (PD): 0.625W Thermal Resistance from Junction to Ambient (RθJA): 200℃/W Junction Temperature (TJ): 150℃ Electrical Characteristics: Drain-Source Breakdown Voltage (V(BR)DSS): 60V Gate-Threshold Voltage (V(GS)th): 0.8 - 3V Zero Gate Voltage Drain Current (IDSS): 1μA On-state Drain Current (ID(ON)) at VGS=4.5V, VDS=10V: 75mA Drain-Source On-Resistance (RDS(on)) at VGS=10V, ID=500mA: 5Ω Drain-source on-voltage (VDS(on)) at VGS=4.5V, ID=75mA: 0.45V Input Capacitance (Ciss): 60pF Output Capacitance (Coss): 25pF Reverse Transfer Capacitance (Crss) at VDS=25V, VGS=0V, f=1MHz: 5pF Performance Metrics: Turn-on Time (td(on)): 10ns Turn-off Time (td(off)): 10ns (VDD=15V, RL=30Ω, ID=500mA, VGEN=10V, RG=25Ω) This MOSFET is perfect for use as a load switch in portable devices and DC/DC converters, ensuring efficient and reliable operation.