Galleon 2026Download our mobile shopping application for faster and easy transaction.
Product ID:
87916
Identifier:
B08M3ZPS7K
Brand:
CHANZON
Model:
Shipping Weight:
0.03 lbs
Manufacturer:
CHANZON
Shipping Dimension:
6.3 x 5.51 x 0.39 inches
₱707
+ ₱ 150
Shipping Cost from USA to Philippines inclusive of custom fees.
Cost too high? Check weight and dimension on product details and click "I think this is wrong?" link.
Get it between 2026-06-12 to 2026-06-19.
Additional 3 business days for provincial shipping.
- Price and Stocks may change without prior notice
- Packaging of actual item may differ from photo shown
Cash upon Pick-up - orders grand total must not exceed ₱5,000.00. Order will be pickup at Galleon's Office.
Cash on Delivery - orders grand total must not exceed of ₱10,000.00 and must not exceed ₱5,000.00 for provincial areas. See all payment methods
Transistor Type: Power Metal-Oxide-Semiconductor Field-Effect (MOSFET) Transistor.
Transistor Polarity: N-Channel NMOS Transistor.
Specification: Product model IRF7413TR, advanced SOP-8 surface-mount packaging for optimal performance and space-saving.
Application: Typically used in power supply units, motor controllers, and various high-power switching and amplification applications.
Package: Pack of 10, securely packaged in an anti-static bag for electrostatic protection and long shelf life.
Product Description: This high-performance N-channel Power MOSFET is designed for high-efficiency power applications. It features a robust SO-8 package for compatibility with existing surface mount techniques and is RoHS compliant, ensuring environmental friendliness. Key Features: - Multi-Vendor Compatible with Industry-standard Pinout - Easier Manufacturing and Increased Reliability with MSL1 Qualification - Environmentally Friendly: RoHS Compliant and Halogen-Free Electrical Characteristics: - Drain-to-Source Voltage (VDS): Max 30V - Gate-to-Source Voltage (VGS): Operating range from -55°C to +150°C - Continuous Drain Current (ID): Up to 13A at 25°C, VGS @ 10V - Drain-to-Source On-Resistance (RDS(on)): Max 0.011Ω at VGS = 10V - Gate Charge (Qg): Typical 52nC - Turn-on Delay Time (td(on)): Typically 8.6ns - Rise Time (tr): Typically 50ns - Turn-off Delay Time (td(off)): Typically 52ns - Fall Time (tf): Typically 46ns - Input Capacitance (Ciss): Up to 1800pF - Output Capacitance (Coss): Up to 680pF - Reverse Transfer Capacitance (Crss): Up to 240pF Thermal Performance: - Junction-to-Ambient Thermal Resistance (RθJA): Max 50°C/W - Junction and Storage Temperature Range: -55 to +150°C Avalanche Energy: - Single Pulse Avalanche Energy (EAS): Up to 260mJ - Peak Diode Recovery dv/dt: Up to 200V/ns
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