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Chanzon SS8550 TO-92 PNP Power BJT Bipolar Junction Transistor, Complementary to SS8050 (Pack of 100pcs)
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Chanzon SS8550 TO-92 PNP Power BJT Bipolar Junction Features
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Transistor Type: High power PNP silicon Bipolar Junction Transistor.
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Transistor Polarity: PNP Bipolar Junction Transistor.
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Specification: Manage VCBO up to 40V, VCEO up to 25V, VEBO up to 6V, IC up to 1.5A, and total dissipation power (Ptot) at 25°C environment temperature up to 1W.
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Application: Widely used in applications demanding high amplification and low saturation voltage including power supplies and motor controls.
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Package: Each unit is individually packaged in an Anti-Static bag for electrostatic protection, ESD safety, and extended shelf life.
About Chanzon SS8550 TO-92 PNP Power BJT Bipolar Junction
PNP Plastic-Encapsulate Transistor - SS8550The SS8550 is a PNP transistor designed for power dissipation applications, featuring a robust TO-92 plastic encapsulation. Key Specifications: Collector-Base Voltage (VCBO): -40V Collector-Emitter Voltage (VCEO): -25V Emitter-Base Voltage (VEBO): -5V Collector Current - Continuous (IC): -1.5A Junction Temperature (Tj): 150°C Performance Characteristics: DC Current Gain (hFE): 40 to 400 Collector-Emitter Saturation Voltage (VCE(sat)): -0.5V at IC=-800mA Base-Emitter Saturation Voltage (VBE(sat)): -1.2V at IC=-800mA Transition Frequency (fT): 100MHz With a classification of hFE(2) ranging from B to D3, this transistor is suitable for a variety of applications requiring medium power amplification and switching.
