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Transistor Type: P-Channel MOS Field-Effect Transistor.
Transistor Polarity: P-Channel MOSFET Transistor.
Specification: This IRF9Z34N power transistor model features a TO-220AB encapsulation form.
Application: Used widely in high-power switching, amplification, and power management applications, perfect for power supplies, motor control, and audio amplifiers.
Package: Comes in a pack of 10 with Anti-Static bag offering electrostatic protection, ESD safety, and ensuring long shelf life.
High-Performance Power Transistor Introducing a robust and reliable power transistor designed for demanding applications in various electronic devices. Key Features Drain-to-Source Voltage (VDS): Supports high voltage applications with a range from -4.5V to -100V. Drain-to-Source Current (ID): Capable of handling currents from -1A to -17A, ensuring power delivery for heavy loads. Gate-to-Source Voltage (VGS): Operates efficiently with a range of -4.5V to 15V, providing flexibility in circuit design. Junction Temperature (Tj): Designed to withstand temperatures from -25°C to 175°C, ensuring reliable operation in a wide range of conditions. Drain-to-Source On Resistance (RDS(on)): Offers low resistance for efficient power transfer. Technical Specifications Pulse Width: Suitable for 20µs pulse width operations, ideal for intermittent high-power demands. Operational Area: Limited by RDS(on), ensuring safe and efficient operation within specified parameters. Capacitance (C): Equipped with internal capacitances for stable high-frequency operation. Thermal Response: Features a thermal response time that ensures quick temperature regulation. Avalanche Energy (EAS): Withstands high energy pulses, protecting against voltage spikes. ApplicationsIdeal for use in power electronics, motor drives, switching regulators, and high-power amplifiers. Safety and ReliabilityComplies with stringent safety standards, ensuring dependable performance in critical applications.