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FET type: MOS
Conductive mode: enhanced
Configuration type: N channel
Operating temperature range: -55℃ to +150℃
Application areas: new energy, household appliances, 3C digital, automotive electronics, measuring instruments, smart home, network communications, security equipment, medical electronics, lighting electronics, wearable devices, Internet of Things
Product Specifications: Continuous drain current: 3.8 A To maximum drain-source voltage: 55 V To maximum drain-source resistance: 40 mΩ To large gate threshold voltage: 2V To small gate threshold voltage: 1V Gate source voltage (Vgs): ±16V Number of pins: 3+Tab Transistor configuration: single Maximum power dissipation: 2.1W Typical turn-off delay time: 35 ns Typical turn-on delay time: 6.2 ns RoHS: Detailed information about RoHS compliance Installation method: SMD Package Included 10 pcs* LL2705