Transistors Silicon KT816B Analogue 2SA490, 2SA671, BD176, BD234, BD438 USSR 30 pcs

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About Transistors Silicon KT816B Analogue

Transistors KT816B mezaepitaksialno silicon-planar structures pnp amplification. Designed for use in low-frequency amplifiers, operational and differential amplifiers, converters and pulse devices. KT816B: The structure of transistor: pnp; Pk t max - constant power dissipation collector heatsink: 25W; fgr - Cutoff frequency of current transfer ratio of the transistor for the circuit with common emitter: not less than 3 MHz; Uker max - The maximum collector-emitter voltage at a given current collector and a predetermined resistance in the base-emitter voltage: 45 V (1k) Uebo max - Maximum voltage emitter-base reverse current at a given emitter and collector open circuit: 5; Ik max - The maximum permissible continuous collector current of 3 A; Ik and max - The maximum permissible pulse collector current: 6 A; Ikbo - Reverse collector current - the current through the collector junction reverse voltage for a given collector-base and emitter open output: less than 0.1 mA (25V); h21e - Static current transfer ratio of the transistor circuit for a common-emitter: more than 25; CK - Capacity of the collector junction: no more than 60 pF; Rke us - saturation resistance between the collector and emitter: no more than 0.6 Ohms