2T956A Transistor Silicon Military USSR 1 pcs

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About 2T956A Transistor Silicon Military USSR 1 Pcs

2T956A Transistors 2T956A silicon epitaxial-planar structures n-p-n generator. Designed for use in linear broadband power amplifiers at frequencies of 1.5 ... 30 MHz at a supply voltage of 28 V. 2T956A: Structure of the transistor: n-p-n; Рк т max - Constant dissipated collector power with heat sink: 70 W; fgr - Boundary frequency of the transistor current transfer coefficient for a common emitter circuit: not less than 100 MHz; Uker max - The maximum collector-emitter voltage for a given collector current and a given resistance in the base-emitter circuit: 100 V (0.01 kΩ); Uebo max - The maximum emitter-base voltage for a given reverse current of the emitter and an open collector circuit: 4 V; Iк max - Maximum permissible constant collector current: 15 A; Ike - Collector-emitter return current for given collector-emitter return voltage and resistance in the base-emitter circuit: not more than 80 mA (100 V); h21e - Static transistor current transfer coefficient for circuits with common emitter: 10 ... 80; Sk - Collector junction capacity: not more than 400 pF; Q.r. - Power gain: not less than 20 dB; Roy - Transistor output power: not less than 100 W at 30 MHz