Transistor Silicon Military KT830A (2T830A) analoge 2N5781 Gold USSR 2 pcs

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Transistor Silicon Military KT830A (2T830A) analoge Features

• Transistor Silicon military KT830A (2T830A) analoge 2N5781 GOLD USSR 2 pcs

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About Transistor Silicon Military KT830A (2T830A) Analoge

Transistors KT830A (2T830A) silicon mesaepitaxial-planar structures p-n-p. Designed for use in power amplifiers, secondary power supplies, converters. KT830A (2T830A): Structure of the transistor: p-n-p; Рк т max - Constant dissipated collector power with heat sink: 5 W; fgr - Boundary frequency of the transistor current transfer coefficient for a common emitter circuit: at least 4 MHz; UCBO max - Maximum collector-base voltage for a given collector return current and open-circuit emitter: 35 V; Uebo max - The maximum emitter-base voltage for a given reverse current of the emitter and an open collector circuit: 5 V; Iк max - Maximum permissible constant collector current: 2 A; Iк and max - The maximum allowable pulse current of the collector: 4 A; Iкбо - Return current of the collector - current through the collector junction at the given collector-base return voltage and the open emitter terminal: no more than 100 mАА (35В); h21e - Static transistor current transfer ratio for circuits with a common emitter: more than 25; Rke us - Resistance of saturation between the collector and emitter: no more than 1.2 Ohm