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NPT Trench Technology, Positive temperature coefficient.
Low saturation voltage: VCE(sat), typ = 2.0V @ IC = 25A and TC = 25°C.
Low switching loss: Eoff, typ = 0.96mJ @ IC = 25A and TC = 25°C.
Extremely enhanced avalanche capability.
NOTE:Exposure to absolute maximum rating conditions for extended periods may affect device reliability
Using proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conductionand switching performances, high avalanche ruggedness andeasy parallel operation.This device is well suited for the resonant or soft switchingapplication such as induction heating, microwave oven, etc. Collector-Emitter Voltage:1200V Collector Current:25A Maximum Power Dissipation:312W Diode Continuous Forward Current::25A Package Including: 5pcs*FGA25N120ANTD