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Transistors KT637A-2 silicon epitaxial-planar structures n-p-n generator. KT637A-2: • Structure of the transistor: n-p-n; • Рк max - Constant dissipated collector power: 1.5 W; • fgr - Boundary frequency of the transistor current transfer factor for a common emitter circuit: not less than 1300 MHz; • UCBO max - Maximum collector-base voltage for a given collector return current and open circuit of the emitter: 30 V; • Ueb max - The maximum emitter-base voltage for a given reverse current of the emitter and open collector circuit: 2.5 V; • Iк max - Maximum permissible constant collector current: 200 mA; • Iк and max - The maximum allowable pulse current of the collector: 300 mA; • Iкбо - Return current of the collector - current through the collector junction with the given collector-base return voltage and the open emitter terminal: no more than 0.1 mA (30V); • h21e - Static transistor current transfer coefficient for circuits with common emitter: 30 ... 90; • Sk - Capacity of the collector junction: not more than 4.5 pF; • Roy - Transistor output power: not less than 0.4 W at 3 GHz; • tk - Time constant of the feedback loop at high frequency: no more than 3 ps