S.U.R. & R Tools Transistor silicon military KT321B (2T321B) USSR 10 pcs

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About S.U.R. & R Tools Transistor Silicon Military KT321B

Transistors KT321B are silicon, epitaxial-planar structures p-n-p pulse. Designed for use in pulse amplifiers and switching devices. KT321B: • Structure of the transistor: p-n-p • Рк max - Permanent Dissipated Collector Power: 210 mW; • Рк and max - Maximum allowable pulse dissipated collector power: 20 W; • fgr - Boundary frequency of the transistor current transfer coefficient for a common emitter circuit: at least 60 MHz; • UCBO max - Maximum collector-base voltage for a given collector return current and open-circuit emitter: 60 V; • Uebo max - The maximum emitter-base voltage for a given reverse current of the emitter and an open collector circuit: 4 V; • Iк max - Maximum permissible constant collector current: 200 mA; • Iкбо - Return current of the collector - current through the collector junction at the given collector-base return voltage and the open emitter terminal: no more than 0.1 mA; • h21E - Static current transfer coefficient for a common emitter circuit in the large signal mode: 40 ... 120; • Sk - Collector junction capacity: not more than 80 pF; • Rke us - Resistance of saturation between the collector and the emitter: no more than 3.6 Ohm