S.U.R. & R Tools Transistors silicon KT3117A1 analoge 2N2020, 2N2021, 2N2222, 2N2539 USSR 30 pcs

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About S.U.R. & R Tools Transistors Silicon KT3117A1

Transistors KT3117A1 silicon epitaxial-planar structures n-p-n pulse. Designed for use in impulse and switching devices. KT3117A1: • Structure of the transistor: n-p-n • Рк max - Permanent Dissipated Collector Power: 300 mW; • fgr - Boundary frequency of the transistor current transfer coefficient for a common emitter circuit: not less than 200 MHz; • UCBO max - Maximum collector-base voltage for a given collector return current and open-circuit emitter: 60 V; • Uebo max - The maximum emitter-base voltage for a given reverse current of the emitter and an open collector circuit: 4 V; • Iк max - Maximum permissible constant collector current: 400 mA; • Iкбо - Return current of the collector - current through the collector junction at the given collector-base return voltage and the open emitter terminal: no more than 10 μA (60 V); h21E - Static current transfer ratio for a common emitter circuit in the large signal mode: 40 ... 200; • Sk - Collector junction capacity: no more than 10 pF; • Rke us - Resistance of saturation between the collector and emitter: no more than 1.2 Ohm