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Transistors KT8182A silicon structures n-p-n switching. The structure of n-p-n The maximum permissible (impulse) voltage of the collector-base is 600 V The maximum permissible (impulse) voltage of the collector-emitter is 400 V The maximum permissible permanent (impulse) collector current is 10000 (15000) mA Maximum permissible continuous dissipated collector power without heat sink (with heat sink) (60) W Static current transfer coefficient of a bipolar transistor in a circuit with a common emitter of 10-50 Reverse collector current < 2000 μA Boundary frequency of the current transfer coefficient in the circuit with a common emitter > 7 MHz Noise factor of bipolar transistor