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Transistors KT855A silicon epitaxial-planar structures p-n-p amplifying. KT855A: Structure of the transistor: p-n-p; Рк т max - Constant dissipated collector power with heatsink: 40 W; fgr - Boundary frequency of the transistor current transfer factor for a common emitter circuit: at least 5 MHz; Uebo max - The maximum emitter-base voltage for a given reverse current of the emitter and an open collector circuit: 5 V; Iк max - Maximum permissible constant collector current: 5 A; Iк and max - The maximum allowable pulse current of the collector: 8 A; Iкбо - Return current of the collector - current through the collector junction with the given collector-base return voltage and the open emitter terminal: no more than 1000 μA (250 V); h21e - Static transistor current transfer coefficient for circuits with common emitter: more than 20; Sk - Collector junction capacity: not more than 200 pF; Rke us - Resistance of saturation between the collector and the emitter: no more than 0.5 Ohm