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Transistors KT897B silicon epitaxial-planar structures n-p-n composite. KT897B: • Structure of the transistor: n-p-n; • Рк max - Constantly dissipated collector power: 3 W; • Рк т max - Constant dissipated collector power with heat sink: 150 W; • fgr - Boundary frequency of the transistor current transfer factor for a common emitter circuit: more than 10 MHz; • UCBO max - Maximum collector-base voltage for a given collector return current and open-circuit emitter: 200 V; • Uebo max - The maximum emitter-base voltage for a given reverse current of the emitter and an open collector circuit: 5 V; • Iк max - Maximum permissible constant collector current: 20 A; • h21e - Static transistor current transfer coefficient for circuits with common emitter: more than 400; • Rke us - Resistance of saturation between the collector and emitter: not more than 0,23 Ohm