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Transistors KT9181A silicon epitaxial-planar structures n-p-n universal. KT9181A: • Structure of the transistor: n-p-n; • Рк т max - Constant dissipated collector power with heat dissipation: 12.5 W; • fgr - Boundary frequency of the transistor current transfer factor for a common emitter circuit: more than 100 MHz; • UCBO max - Maximum collector-base voltage for a given collector return current and open-circuit emitter: 40 V; • Uebo max - The maximum emitter-base voltage for a given reverse current of the emitter and an open collector circuit: 5 V; • Iк max - Maximum permissible constant collector current: 3 A; • Iкбо - Return current of the collector - current through the collector junction with the given collector-base return voltage and the open emitter terminal: no more than 1 μA (30 V); • h21e - Static transistor current transfer ratio for circuits with common emitter: 60 ... 400; • Rke us - Resistance of saturation between the collector and the emitter: not more than 0.25 Ohm