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Transistors KT919B silicon epitaxial-planar structures n-p-n generator. KT919B: • Structure of the transistor: n-p-n; • Рк т max - Constant dissipated collector power with heat sink: 3.25 W; • fgr - Boundary frequency of the transistor current transfer factor for a common emitter circuit: more than 1350 MHz; • UCBO max - Maximum collector-base voltage for a given collector return current and open-circuit emitter: 45 V; • Ueb max - The maximum emitter-base voltage for a given reverse current of the emitter and open collector circuit: 3.5 V; • Iк max - Maximum permissible constant collector current: 0,2 A; • Iк and max - The maximum allowable pulse current of the collector: 0,4 A; • Iкбо - Return current of the collector - current through the collector junction with the given collector-base return voltage and the open emitter terminal: no more than 2 mA (45 V); • Sk - Collector junction capacity: no more than 12 pF; • Pins - Transistor output power: at least 3 W at 2 GHz; • tk - Time constant of the feedback loop at high frequency: no more than 2.2 ps