Transistor silicone KT819BM analoge 2N6253, 2N6371, 2N6470, BD142 USSR 6 pcs

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About Transistor Silicone KT819BM Analoge

KT819BM Transistors silicon mesaepitaxial-planar structures n-p-n switching. KT819BM: • Structure of the transistor: n-p-n; • Рк max - Constantly dissipated collector power: 2 W; • Рк т max - Constant dissipated collector power with heat sink: 100 W; • fgr - Boundary frequency of the transistor current transfer coefficient for the circuit with a common emitter: not less than 3 MHz; • Uker max - Maximum collector-emitter voltage for a given collector current and a specified resistance in the base-emitter circuit: 50 V (0.1 kΩ); • Uebo max - The maximum emitter-base voltage for a given reverse current of the emitter and an open collector circuit: 5 V; • Iк max - Maximum permissible constant collector current: 15 A; • Iк and max - Maximum permissible collector pulse current: 20 A; • Iкбо - Return current of the collector - current through the collector junction at the given collector-base return voltage and the open emitter terminal: no more than 1 mA (40V); • h21e - Static transistor current transfer coefficient for circuits with common emitter: more than 20; • Rke us - Resistance of saturation between the collector and the emitter: no more than 0.4 Ohm