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BOJACK IRF530N MOSFET is a field effect transistor that can be widely used in analog circuits and digital circuits. Basic parameters: The IRF530N is available in a TO-220AB package On-state resistance Rds(on): 0.09 ohm Voltage Vgs highest: ±20V Number of stitches: 3 Operating Temperature:-55 °C to +175 °C Thermal resistance junction to case A: 0.47°C/W Voltage Vds Typical: 100V Current Id continuous: 17A Current Idm pulse: 60A Surface Mount Device: Through Hole Mounting Lead-free environmental protection