Chanzon BD135 TO-126 NPN Power Bipolar Junction Transistor, Silicone Based High Frequency Transistor (Pack of 10pcs)

Product ID : 47021388

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Galleon Product ID 47021388

Shipping Weight 0.04 lbs
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Manufacturer CHANZON

Shipping Dimension 6.3 x 5.51 x 0.51 inches
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Chanzon BD135 TO-126 NPN Power Bipolar Junction Features

• Transistor Type: High-frequency Silicon Power Bipolar Junction Transistor.

• Transistor Polarity: NPN type for efficient power transfer and switching.

• Specification: Operates with a Collector Power Dissipation (PC) of 8W, a Collector Current (IC) of 1.5A, with Maximum Voltage Ratings (VCBO and VCEO) of 45V and Emitter-Base Voltage (VEBO) of 5V. It also sustains a Saturation Voltage (VCE(sat)) of 0.5V at IC=0.5 A.

• Performance: Features a frequency characteristic (fT) of 50MHz and a DC Current Gain (hFE) of 63-250, delivering excellent performance for high-frequency applications.

• Package: Packaged in a TO-126 form factor with 10 pieces per pack and enclosed in an anti-static bag offering electrostatic protection, ESD safety, and long shelf life.

About Chanzon BD135 TO-126 NPN Power Bipolar Junction